Characterization of Cr/Ag Bi-Layer thin Metal Contacts Sputter Deposited on N-Type Si Semiconductor
نویسندگان
چکیده
منابع مشابه
Physical Properties of Reactively Sputter-Deposited C-N Thin Films
This work aims to prepare and study amorphous carbon nitride (CNx) films. Films were deposited by reactive magnetron radiofrequency (RF) sputtering from graphite target in argon and nitrogen mixture discharge at room temperature. The ratio of the gas flow rate was varied from 0.1 to 1. Deposited films were found to be amorphous. Highest Nitrogen concentration achieved was 42 atomic percent whic...
متن کاملMetal contacts to lowly doped Si and ultra thin SOI
An increasing part of the semiconductor device community is using SOI wafers for the fabrication of modern CMOS generations (FINFET [1], Schottky barrier transistors [2], (bio-) sensor applications, optical devices and also as test vehicles to study the fundamental properties of 1D and 2D silicon structures. For SOI thicknesses below the Debye length it becomes interesting to study metal-Si con...
متن کاملCapacitance-voltage Characterization of Atomic-Layer-Deposited Al2O3/InGaAs and Al2O3/GaAs Metal –Oxide-Semiconductor Structures
ALD Al2O3/GaAs and Al2O3/In0.2Ga0.8As MOS and source-drain implanted MOSFET structure were fabricated and characterized by capacitance-voltage (CV) and current-voltage (I-V) measurements. It is shown that, after high-temperature anneal, the MOS leakage current density of the thinner (16nm) film is much higher than that of the thicker (30nm) film. The highquality Al2O3 (30nm)/In0.2Ga0.8As interf...
متن کاملMagnetic Phases of Sputter Deposited Thin-Film Erbium
We present a detailed structural and magnetic characterization of sputter deposited thin film erbium, determined by x-ray diffraction, transport measurements, magnetometry and neutron diffraction. This provides information on the onset and change of the magnetic state as a function of temperature and applied magnetic field. Many of the features of bulk material are reproduced. Also of interest ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Engineering & Technology
سال: 2018
ISSN: 2227-524X
DOI: 10.14419/ijet.v7i4.30.22301